For photoresist

We have various types of resins for photoresist to suit customers' needs.
In addition, we can offer the customized resin depending on demand properties excepting listed grade below.
For example, adjustment of m-cresol/p-cresol ratio, Mw, DR, and also modification by other monomer (derivatives of phenol, aldehyde, and other linker).
Please feel free to contact us.

For photoresist

Properties Isomer
ratio m/p
Mw [ - ] DR[Å/s] Feature
80/20 2400~2900 3400~4600  
3800~4600 1700~2300  
50/50 9000~11000 220~280  
12000~15000 130~170  
16000~20000 85~115  
40/60 3100~3800 950~1250  
5300~6400 280~380  
3700~4500 680~920 Dimer: 5%>
4700~5700 340~460 Dimer: 5%>
※Developer is 2.38%TMAH
What is "Photoresist"

“Photoresist is used to form circuit pattarn on manufacturing process of semi-conductor and FPD.
Physically and chemical changes of photoresist is occurred by light irradiation, this phenomenon is applied to form circuit pattern.
In particular, firstly photoresist is coated on silicon wafer, and then coated wafer is exposed to light to form circuit pattern by transfer printing.
Photoresist has two types, "positive resist and negative resist".
The portion part of "positive resist "that is exposed to light becomes soluble to developer.
In an opposite way, negative resist becomes insoluble to developer by exposion. Phenolic resin is used as base resin in photoresist formulation.

About a photoresist (Usage of photoresist for liquid crystal)

The transparent electrode TFT element is formed by transparent electrode
membrane being evaporated on the glass substrate with photo-lithography of cresol resin photoresist.

※The data mentioned above are not guaranteed values, but representative ones.